FCPF2250N80Z Series

Power MOSFET, N-Channel, SUPERFET® II, 800 V, 2.6 A, 2.25 Ω, TO-220F

Catalog

Power MOSFET, N-Channel, SUPERFET® II, 800 V, 2.6 A, 2.25 Ω, TO-220F

Part	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Vgs (Max)	Supplier Device Package	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Package / Case	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Technology	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]
ON Semiconductor FCPF2250N80Z	-55 °C	150 °C	N-Channel	20 V	TO-220F-3	4.5 V	800 V	TO-220-3 Full Pack	Through Hole	2.6 A	585 pF	10 V	MOSFET (Metal Oxide)	14 nC	2.25 Ohm	21.9 W

Catalog

Power MOSFET, N-Channel, SUPERFET® II, 800 V, 2.6 A, 2.25 Ω, TO-220F

Key Features

• RDS(on)= 1.8 Ω(Typ.)

• Ultra Low Gate Charge (Typ. Qg= 11 nC)

• Low Eoss(Typ. 1.1 uJ @ 400V)

• Low Effective Output Capacitance (Typ. Coss(eff.)= 51 pF)

• 100% Avalanche Tested

• RoHS Compliant

• ESD Improved Capability

Description

SuperFET®II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Lighting, ATX power and industrial power applications.