
1N6631US/TR
Active1100V UFR,FRR SQ SMT TR B-BODY SQ. MELF ROHS COMPLIANT: YES
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1N6631US/TR
Active1100V UFR,FRR SQ SMT TR B-BODY SQ. MELF ROHS COMPLIANT: YES
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Technical Specifications
Parameters and characteristics for this part
| Specification | 1N6631US/TR |
|---|---|
| Capacitance @ Vr, F | 40 pF |
| Current - Average Rectified (Io) | 1.4 A |
| Current - Reverse Leakage @ Vr | 4 µA |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction [Max] | 150 °C |
| Operating Temperature - Junction [Min] | -65 C |
| Reverse Recovery Time (trr) | 60 ns |
| Speed | 200 mA, 500 ns |
| Supplier Device Package | A-MELF |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 1100 V |
| Voltage - Forward (Vf) (Max) @ If | 1.4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 100 | $ 16.46 | |
| Microchip Direct | N/A | 1 | $ 17.72 | |
| Newark | Each | 100 | $ 16.46 | |
| 500 | $ 15.83 | |||
Description
General part information
1N6631US-Rectifier Series
This "Ultrafast Recovery" rectifier diode series is military qualified to MIL-PRF19500/590 and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 2.0 to 4.0 Amp rated rectifiers for working peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidlessglass construction using an internal "Category I" metallurgical bond. These devices are also available in axial-leaded packages for thrUS-hole mounting (see separate data sheet for 1N6626 thru 1N6631). Microchip also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including standard, fast and ultrafast device types in both through-hole and surface mount packages.
Documents
Technical documentation and resources