Discrete Semiconductor Products

SI5442DU-T1-GE3

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MOSFET N-CH 20V 25A PPAK

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Discrete Semiconductor Products

Active

MOSFET N-CH 20V 25A PPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SI5442DU-T1-GE3

Current - Continuous Drain (Id) @ 25°C	25 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	45 nC
Input Capacitance (Ciss) (Max) @ Vds	1700 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® ChipFET™ Single
Power Dissipation (Max)	31 W, 3.1 W
Rds On (Max) @ Id, Vgs [Max]	10 mOhm
Supplier Device Package	PowerPAK® ChipFet Single
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	900 mV

Part	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Technology	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs [Max]	Vgs(th) (Max) @ Id	Vgs (Max)	FET Type	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)
Vishay General Semiconductor - Diodes Division SI5442DU-T1-GE3	20 V	1700 pF	-55 °C	150 °C	45 nC	PowerPAK® ChipFet Single	MOSFET (Metal Oxide)	PowerPAK® ChipFET™ Single	1.8 V 4.5 V	10 mOhm	900 mV	8 V	N-Channel	Surface Mount	25 A	3.1 W 31 W

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General part information

N-Channel 20 V 25A (Tc) 3.1W (Ta), 31W (Tc) Surface Mount PowerPAK® ChipFet Single

Technical documentation and resources