SI5442 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 20V 25A PPAK
| Part | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Supplier Device Package | Technology | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs [Max] | Vgs(th) (Max) @ Id | Vgs (Max) | FET Type | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 20 V | 1700 pF | -55 °C | 150 °C | 45 nC | PowerPAK® ChipFet Single | MOSFET (Metal Oxide) | PowerPAK® ChipFET™ Single | 1.8 V 4.5 V | 10 mOhm | 900 mV | 8 V | N-Channel | Surface Mount | 25 A | 3.1 W 31 W |