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STGF7NB60SL
Discrete Semiconductor Products

STGF7NB60SL

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STMicroelectronics

7 A, 600 V, LOW DROP IGBT

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DocumentsDS3533+7
STGF7NB60SL
Discrete Semiconductor Products

STGF7NB60SL

Active
STMicroelectronics

7 A, 600 V, LOW DROP IGBT

Deep-Dive with AI

DocumentsDS3533+7

Technical Specifications

Parameters and characteristics for this part

SpecificationSTGF7NB60SL
Current - Collector (Ic) (Max) [Max]15 A
Current - Collector Pulsed (Icm)20 A
Gate Charge16 nC
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3 Full Pack
Power - Max [Max]25 W
Supplier Device PackageTO-220FP
Switching Energy4.1 mJ
Td (on/off) @ 25°C [custom]5.2 µs
Td (on/off) @ 25°C [custom]1.1 µs
Test Condition5 V, 480 V, 7 A, 1 kOhm
Vce(on) (Max) @ Vge, Ic [Max]1.6 V
Voltage - Collector Emitter Breakdown (Max) [Max]600 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 941$ 2.18

Description

General part information

STGF7NB60SL Series

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH IGBTs, with outstanding performances. The suffix S identifies a family optimized achieve minimum on-voltage drop for low frequency applications (<1kHz).