Discrete Semiconductor Products

IXTP24P085T

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Littelfuse/Commercial Vehicle Products

DISCMSFT PCHAN-TRENCH GATE TO-220AB/FP/ TUBE

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Discrete Semiconductor Products

IXTP24P085T

Active

Littelfuse/Commercial Vehicle Products

DISCMSFT PCHAN-TRENCH GATE TO-220AB/FP/ TUBE

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IXTP24P085T

Current - Continuous Drain (Id) @ 25°C	24 A
Drain to Source Voltage (Vdss)	85 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	41 nC
Input Capacitance (Ciss) (Max) @ Vds	2090 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	83 W
Rds On (Max) @ Id, Vgs [Max]	65 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	15 V
Vgs(th) (Max) @ Id	4.5 V

IXTP24N65X2 Series

DiscMSFT NChUltraJnctX2Class TO-220AB/FP

Part	Mounting Type	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Vgs (Max)	FET Type	Technology	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max) [Max]	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]
Littelfuse/Commercial Vehicle Products IXTP24N65X2	Through Hole	5 V	650 V	10 V	TO-220-3	30 V	N-Channel	MOSFET (Metal Oxide)	145 mOhm	2060 pF	-55 °C	150 °C	390 W	TO-220-3	24 A	36 nC
Littelfuse/Commercial Vehicle Products IXTP24P085T	Through Hole	4.5 V	85 V	10 V	TO-220-3	15 V	P-Channel	MOSFET (Metal Oxide)		2090 pF	-55 °C	150 °C		TO-220-3	24 A		83 W	65 mOhm	41 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 2.66
		50	$ 2.14
		100	$ 1.76
		500	$ 1.49
		1000	$ 1.26
		2000	$ 1.20
		5000	$ 1.15
Newark	Each	100	$ 1.75
		500	$ 1.58
		1000	$ 1.37
		2500	$ 1.23

Description

General part information

IXTP24N65X2 Series

Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry commonly involved when using an N-Channel MOSFET. This enables designers to reduce component count, thereby improving drive circuit simplicity and over-all component cost structure. Furthermore, it allows for the design of a complementary power output stage with a corresponding N-Channel MOSFET, for a power half bridge stage paired with a simple drive circuit. Advantages: Low gate charge resulting in simple drive requirement High power density Fast switching

Documents

Technical documentation and resources