IXTP24N65X2 Series

DiscMSFT NChUltraJnctX2Class TO-220AB/FP

Manufacturer: Littelfuse/Commercial Vehicle Products

Catalog

DiscMSFT NChUltraJnctX2Class TO-220AB/FP

Part	Mounting Type	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Vgs (Max)	FET Type	Technology	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max) [Max]	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]
Littelfuse/Commercial Vehicle Products IXTP24N65X2	Through Hole	5 V	650 V	10 V	TO-220-3	30 V	N-Channel	MOSFET (Metal Oxide)	145 mOhm	2060 pF	-55 °C	150 °C	390 W	TO-220-3	24 A	36 nC
Littelfuse/Commercial Vehicle Products IXTP24P085T	Through Hole	4.5 V	85 V	10 V	TO-220-3	15 V	P-Channel	MOSFET (Metal Oxide)		2090 pF	-55 °C	150 °C		TO-220-3	24 A		83 W	65 mOhm	41 nC

Catalog

DiscMSFT NChUltraJnctX2Class TO-220AB/FP

Key Features

• Ultra low on-resistance RDS(ON) and gate charge Qg

• Fast body diode

• dv/dt ruggedness

• Avalanche rated

• Low package inductance

• International standard packages

Description

Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry commonly involved when using an N-Channel MOSFET. This enables designers to reduce component count, thereby improving drive circuit simplicity and over-all component cost structure. Furthermore, it allows for the design of a complementary power output stage with a corresponding N-Channel MOSFET, for a power half bridge stage paired with a simple drive circuit. Advantages: Low gate charge resulting in simple drive requirement High power density Fast switching