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8-VSSOP
Integrated Circuits (ICs)

TLV6002IDGKT

Active
Texas Instruments

DUAL, 5.5-V, 1-MHZ, RRIO OPERATIONAL AMPLIFIER

8-VSSOP
Integrated Circuits (ICs)

TLV6002IDGKT

Active
Texas Instruments

DUAL, 5.5-V, 1-MHZ, RRIO OPERATIONAL AMPLIFIER

Technical Specifications

Parameters and characteristics for this part

SpecificationTLV6002IDGKT
-3db Bandwidth1 MHz
Amplifier TypeGeneral Purpose
Current - Input Bias1 pA
Current - Output / Channel15 mA
Current - Supply75 µA
Gain Bandwidth Product1 MHz
Mounting TypeSurface Mount
Number of Circuits2
Operating Temperature [Max]125 °C
Operating Temperature [Min]-40 °C
Output TypeRail-to-Rail
Package / Case8-MSOP, 8-TSSOP
Package / Case3 mm
Package / Case [custom]0.118 in
Voltage - Input Offset750 µV
Voltage - Supply Span (Max) [Max]5.5 V
Voltage - Supply Span (Min) [Min]1.8 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.26
10$ 1.13
25$ 1.07
100$ 0.88
Digi-Reel® 1$ 1.26
10$ 1.13
25$ 1.07
100$ 0.88
Tape & Reel (TR) 250$ 0.82
500$ 0.73
1250$ 0.57
2500$ 0.53
6250$ 0.51
12500$ 0.49
Texas InstrumentsSMALL T&R 1$ 0.93
100$ 0.72
250$ 0.53
1000$ 0.38

Description

General part information

TLV6002-Q1 Series

The TLV600x-Q1 family of single and dual-channel operational amplifiers is specifically designed for general-purpose automotive applications. Featuring rail-to-rail input and output (RRIO) swings, low quiescent current (75 µA, typical), wide bandwidth (1 MHz) and low noise (28 nV/√Hz at 1 kHz), this family is attractive for a variety of automotive applications that require a good balance between cost and performance, such as infotainment, engine control units, and automotive lighting. The low-input-bias current (±1 pA, typical) enables the TLV600x-Q1 to be used in applications with megaohm source impedances.

The robust design of the TLV600x-Q1 provides ease-of use to the circuit designer: unity-gain stability with capacitive loads of up to 150 pF, integrated RF/EMI rejection filter, no phase reversal in overdrive conditions, and high electrostatic discharge (ESD) protection (4-kV HBM).

The devices are optimized for operation at voltages as low as 1.8 V (±0.9 V) and up to 5.5 V (±2.75 V), and are specified over the extended temperature range of –40°C to +125°C.