Discrete Semiconductor Products

FDMC3020DC

Obsolete

ON Semiconductor

N-CHANNEL DUAL COOLTM 33 POWERTRENCH® MOSFET 30V, 40A, 6.25MΩ

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Discrete Semiconductor Products

FDMC3020DC

Obsolete

ON Semiconductor

N-CHANNEL DUAL COOLTM 33 POWERTRENCH® MOSFET 30V, 40A, 6.25MΩ

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FDMC3020DC

Current - Continuous Drain (Id) @ 25°C	40 A, 17 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	23 nC
Input Capacitance (Ciss) (Max) @ Vds	1385 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	50 W, 3 W
Rds On (Max) @ Id, Vgs	6.25 mOhm
Supplier Device Package	Dual Cool ™ 33
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

FDMC3020DC Series

N-Channel Dual CoolTM 33 PowerTrench® MOSFET 30V, 40A, 6.25mΩ

Part	Mounting Type	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Technology	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id
ON Semiconductor FDMC3020DC	Surface Mount	3 W 50 W	6.25 mOhm	MOSFET (Metal Oxide)	4.5 V 10 V	8-PowerTDFN	Dual Cool ™ 33	-55 °C	150 °C	N-Channel	17 A 40 A	1385 pF	23 nC	20 V	30 V	3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FDMC3020DC Series

This N-Channel MOSFET is produced using an advanced PowerTrench®process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on)while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. This device has the added benefit of an efficient monolithic Schottky body diode

Documents

Technical documentation and resources