Discrete Semiconductor Products

1N5806US

Unknown

DIODE GEN PURP 150V 1.1A

Search across all available documentation for this part.

Discrete Semiconductor Products

Unknown

DIODE GEN PURP 150V 1.1A

Technical Specifications

Parameters and characteristics for this part

Specification	1N5806US

Capacitance @ Vr, F	25 pF
Current - Average Rectified (Io)	1.1 A
Current - Reverse Leakage @ Vr	1 µA
Mounting Type	Surface Mount
Package / Case	SQ-MELF
Reverse Recovery Time (trr)	25 ns
Speed	500 ns, 200 mA
Technology	Standard
Voltage - Forward (Vf) (Max) @ If [Max]	875 mV

Part	Speed	Reverse Recovery Time (trr)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Technology	Capacitance @ Vr, F	Voltage - Forward (Vf) (Max) @ If [Max]	Mounting Type	Package / Case	Supplier Device Package	Grade	Qualification
Semtech Corporation JAN1N5806
Semtech Corporation 1N5806C.TR	200 mA 500 ns	25 ns	175 ░C	-65 C	1 µA	2.5 A	Standard	25 pF	875 mV	Through Hole	Axial	Axial
Semtech Corporation 1N5806US	200 mA 500 ns	25 ns			1 µA	1.1 A	Standard	25 pF	875 mV	Surface Mount	SQ-MELF
Semtech Corporation JANTX1N5806	200 mA 500 ns	25 ns	175 ░C	-65 C	1 µA	3.3 A	Standard	25 pF	875 mV	Through Hole	Axial	Axial	Military	MIL-PRF-19500/477
Semtech Corporation JANTX1N5806US	200 mA 500 ns	25 ns			1 µA	1.1 A	Standard	25 pF	875 mV	Surface Mount	SQ-MELF		Military	MIL-PRF-19500/477
Semtech Corporation JANTXV1N5806	200 mA 500 ns	25 ns	175 ░C	-65 C	1 µA	3.3 A	Standard	25 pF	875 mV	Through Hole	Axial	Axial	Military	MIL-PRF-19500/477

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 150 V 1.1A Surface Mount

Technical documentation and resources

No documents available