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1N5417C.TR
Discrete Semiconductor Products

1N5806C.TR

Unknown
Semtech Corporation

DIODE GEN PURP 150V 2.5A AXIAL

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1N5417C.TR
Discrete Semiconductor Products

1N5806C.TR

Unknown
Semtech Corporation

DIODE GEN PURP 150V 2.5A AXIAL

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

Specification1N5806C.TR
Capacitance @ Vr, F25 pF
Current - Average Rectified (Io)2.5 A
Current - Reverse Leakage @ Vr1 µA
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]175 ░C
Operating Temperature - Junction [Min]-65 C
Package / CaseAxial
Reverse Recovery Time (trr)25 ns
Speed500 ns, 200 mA
Supplier Device PackageAxial
TechnologyStandard
Voltage - Forward (Vf) (Max) @ If [Max]875 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.00

Description

General part information

1N5806 Series

Diode 150 V 2.5A Through Hole Axial

Documents

Technical documentation and resources