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onsemi-FJP5027OTU GP BJT Trans GP BJT NPN 800V 3A 50000mW 3-Pin(3+Tab) TO-220 Tube
Discrete Semiconductor Products

BDX34CG

Obsolete
ON Semiconductor

TRANS DARLINGTON PNP 100V 10A 70000MW 3-PIN(3+TAB) TO-220AB TUBE

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onsemi-FJP5027OTU GP BJT Trans GP BJT NPN 800V 3A 50000mW 3-Pin(3+Tab) TO-220 Tube
Discrete Semiconductor Products

BDX34CG

Obsolete
ON Semiconductor

TRANS DARLINGTON PNP 100V 10A 70000MW 3-PIN(3+TAB) TO-220AB TUBE

Technical Specifications

Parameters and characteristics for this part

SpecificationBDX34CG
Current - Collector Cutoff (Max) [Max]500 çA
DC Current Gain (hFE) (Min) @ Ic, Vce750 hFE
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-65 °C
Package / CaseTO-220-3
Power - Max [Max]70 W
Supplier Device PackageTO-220
Transistor TypePNP - Darlington
Vce Saturation (Max) @ Ib, Ic2.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]100 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

BDX34C Series

The 10 A, 100 V PNP Darlington Bipolar Power Transistor is designed for general purpose and low speed switching applications. The BDX33B, BDX33C, BDX34B and BDX34C are complementary devices.