BDX34C Series

10 A, 100 V PNP Darlington Bipolar Power Transistor

Catalog

10 A, 100 V PNP Darlington Bipolar Power Transistor

Part	Supplier Device Package	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce	Operating Temperature [Max]	Operating Temperature [Min]	Transistor Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case
ON Semiconductor BDX34CG	TO-220	500 çA	70 W	2.5 V	Through Hole	750 hFE	150 °C	-65 °C	PNP - Darlington	100 V	TO-220-3

Catalog

10 A, 100 V PNP Darlington Bipolar Power Transistor

Key Features

• High DC Current Gain -hFE= 2500 (typ.) at IC= 4.0

• Collector-Emitter Sustaining Voltage at 100 mAdcVCEO(sus)= 80 Vdc (min.) BDX33B, 34BVCEO(sus)= 100 Vdc (min.) - BDX33C, 34C

• Low Collector-Emitter Saturation VoltageCE(sat)= 2.5 Vdc (max.) at IC= 3.0 Adc BDX33B, 33C/34B, 34C

• Monolithic Construction with Build-In Base-Emitter Shunt resistors

• TO-220AB Compact Package

• Pb-Free Packages are Available

Description

The 10 A, 100 V PNP Darlington Bipolar Power Transistor is designed for general purpose and low speed switching applications. The BDX33B, BDX33C, BDX34B and BDX34C are complementary devices.