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TO-263
Discrete Semiconductor Products

FDB86360-F085

Obsolete
ON Semiconductor

N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET, 80V, 110A, 1.8 MΩ

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TO-263
Discrete Semiconductor Products

FDB86360-F085

Obsolete
ON Semiconductor

N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET, 80V, 110A, 1.8 MΩ

Technical Specifications

Parameters and characteristics for this part

SpecificationFDB86360-F085
Current - Continuous Drain (Id) @ 25°C110 A
Drain to Source Voltage (Vdss)80 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds14600 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)333 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs1.8 mOhm
Supplier Device PackageTO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 6.64
10$ 4.47
100$ 3.24
Digi-Reel® 1$ 6.64
10$ 4.47
100$ 3.24

Description

General part information

FDB86360_F085 Series

Automotive Power MOSFET in a D2PAK package for efficient designs with high thermal performance. Gull-wings leads for an improved Board Level Reliability performance. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.