FDB86360_F085 Series

N-Channel PowerTrench® MOSFET, 80V, 110A, 1.8 mΩ

Catalog

N-Channel PowerTrench® MOSFET, 80V, 110A, 1.8 mΩ

Part	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Grade	Rds On (Max) @ Id, Vgs	Vgs (Max)	Power Dissipation (Max)	FET Type	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Qualification	Technology	Package / Case	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)
ON Semiconductor FDB86360-F085	-55 °C	175 ░C	14600 pF	Automotive	1.8 mOhm	20 V	333 W	N-Channel	4.5 V	80 V	Surface Mount	110 A	AEC-Q101	MOSFET (Metal Oxide)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	TO-263 (D2PAK)	10 V

Catalog

N-Channel PowerTrench® MOSFET, 80V, 110A, 1.8 mΩ

Key Features

• Low RDS(on)

• Low Qg(tot)and Capacitance

• AEC−Q101 Qualified and PPAP Capable

• RoHS Compliant

Description

Automotive Power MOSFET in a D2PAK package for efficient designs with high thermal performance. Gull-wings leads for an improved Board Level Reliability performance. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.