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Discrete Semiconductor Products

CSD85301Q2

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Texas Instruments

20-V, N CHANNEL NEXFET™ POWER MOSFET, DUAL SON 2 MM X 2 MM, 27 MOHM, GATE ESD PROTECTION

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WSON (DQK)
Discrete Semiconductor Products

CSD85301Q2

Active
Texas Instruments

20-V, N CHANNEL NEXFET™ POWER MOSFET, DUAL SON 2 MM X 2 MM, 27 MOHM, GATE ESD PROTECTION

Technical Specifications

Parameters and characteristics for this part

SpecificationCSD85301Q2
Configuration2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C5 A
Drain to Source Voltage (Vdss)20 V
FET Feature5V Drive, Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]5.4 nC
Input Capacitance (Ciss) (Max) @ Vds469 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Power - Max [Max]2.3 W
Rds On (Max) @ Id, Vgs [Max]27 mOhm
Supplier Device Package6-WSON (2x2)
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.45
10$ 0.39
100$ 0.27
500$ 0.21
1000$ 0.18
Digi-Reel® 1$ 0.45
10$ 0.39
100$ 0.27
500$ 0.21
1000$ 0.18
Tape & Reel (TR) 3000$ 0.18
Texas InstrumentsLARGE T&R 1$ 0.33
100$ 0.22
250$ 0.17
1000$ 0.11

Description

General part information

CSD85301Q2 Series

The CSD85301Q2 is a 20V, 23mΩ N-Channel device with dual independent MOSFETs in a SON 2mm x 2mm plastic package. The two FETs were designed to be used in a half bridge configuration for synchronous buck and other power supply applications. Additionally, this part can be used for adaptor, USB input protection and battery charging applications. The dual FETs feature low drain to source on-resistance that minimizes losses and offers low component count for space constrained applications.

The CSD85301Q2 is a 20V, 23mΩ N-Channel device with dual independent MOSFETs in a SON 2mm x 2mm plastic package. The two FETs were designed to be used in a half bridge configuration for synchronous buck and other power supply applications. Additionally, this part can be used for adaptor, USB input protection and battery charging applications. The dual FETs feature low drain to source on-resistance that minimizes losses and offers low component count for space constrained applications.