Discrete Semiconductor Products

FDMC6686P

Obsolete

P-CHANNEL POWERTRENCH® MOSFET -20V, -56A, 4MΩ

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Discrete Semiconductor Products

Obsolete

P-CHANNEL POWERTRENCH® MOSFET -20V, -56A, 4MΩ

Technical Specifications

Parameters and characteristics for this part

Specification	FDMC6686P

Current - Continuous Drain (Id) @ 25°C	56 A, 18 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	122 nC
Input Capacitance (Ciss) (Max) @ Vds	13200 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerWDFN
Power Dissipation (Max)	2.3 W, 40 W
Rds On (Max) @ Id, Vgs	4 mOhm
Supplier Device Package	8-PQFN, Power33
Supplier Device Package [x]	3.3 mm
Supplier Device Package [y]	3.3 mm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

P-Channel PowerTrench® MOSFET -20V, -56A, 4mΩ

Part	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Technology	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Package / Case	Supplier Device Package	Supplier Device Package [x]	Supplier Device Package [y]	Vgs (Max)
ON Semiconductor FDMC6686P	1 V	1.8 V 4.5 V	122 nC	2.3 W 40 W	P-Channel	13200 pF	4 mOhm	18 A 56 A	MOSFET (Metal Oxide)	Surface Mount	-55 °C	150 °C	20 V	8-PowerWDFN	8-PQFN Power33	3.3 mm	3.3 mm	8 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

This P-Channel MOSFET is produced using an advanced PowerTrench®process that has been optimized for rDS(ON), switching performance and ruggedness.

Technical documentation and resources