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RF and Wireless

ADPA7001CHIPS-SX

Active
Analog Devices

50 GHZ TO 95 GHZ, GAAS, PHEMT, MMIC, WIDEBAND POWER AMPLIFIER

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RF and Wireless

ADPA7001CHIPS-SX

Active
Analog Devices

50 GHZ TO 95 GHZ, GAAS, PHEMT, MMIC, WIDEBAND POWER AMPLIFIER

Technical Specifications

Parameters and characteristics for this part

SpecificationADPA7001CHIPS-SX
Current - Supply350 mA
Frequency [Max]95 GHz
Frequency [Min]50 GHz
Gain14.5 dBi
Mounting TypeSurface Mount
P1dB17.5 dBm
Package / CaseDie
RF TypeGeneral Purpose
Supplier Device PackageDice
Test Frequency [Max]90 GHz
Test Frequency [Min]70 GHz
Voltage - Supply [Max]4 V
Voltage - Supply [Min]1.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTray 2$ 466.55
4$ 442.52
6$ 429.94
10$ 415.49
14$ 406.76
20$ 398.14

Description

General part information

ADPA7001-Die Series

The ADPA7001CHIPS is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), balanced medium power amplifier, with an integrated temperature compensated on-chip power detector that operates from 50 GHz to 95 GHz. In the lower band of 50 GHz to 70 GHz, the ADPA7001CHIPS provides 14.5 dB (typical) of gain, 25.5 dBm output third-order intercept (OIP3), and 17 dBm of output power for 1 dB gain compression. In the upper band of 70 GHz to 90 GHz, the ADPA7001CHIPS provides 14 dB (typical) of gain, 25 dBm output IP3, and 17.5 dBm of output power for 1 dB gain compression. The ADPA7001CHIPS requires 350 mA from a 3.5 V supply. The ADPA7001CHIPS amplifier inputs/outputs are internally matched to 50 Ω, facilitating integration into multichip modules (MCMs). All data is taken with the chip connected via one 0.076 mm (3 mil) ribbon bond of 0.076 mm (3 mil) minimal length.ApplicationsTest instrumentationMilitary and spaceTelecommunications infrastructure