Discrete Semiconductor Products

SI4626ADY-T1-E3

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MOSFET N-CH 30V 30A 8SO

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Discrete Semiconductor Products

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MOSFET N-CH 30V 30A 8SO

Technical Specifications

Parameters and characteristics for this part

Specification	SI4626ADY-T1-E3

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	125 nC
Input Capacitance (Ciss) (Max) @ Vds	5370 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	6 W, 3 W
Rds On (Max) @ Id, Vgs [Max]	3.3 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Package / Case	Package / Case [y]	Package / Case [x]	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Mounting Type	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs [Max]	FET Type
Vishay General Semiconductor - Diodes Division SI4626ADY-T1-E3	8-SOIC	3.9 mm	0.154 in	3 W 6 W	125 nC	4.5 V 10 V	8-SOIC	Surface Mount	2.5 V	5370 pF	-55 °C	150 °C	MOSFET (Metal Oxide)	20 V	30 A	30 V	3.3 mOhm	N-Channel

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General part information

N-Channel 30 V 30A (Tc) 3W (Ta), 6W (Tc) Surface Mount 8-SOIC

Technical documentation and resources