SI4626 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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⌘K
MOSFET N-CH 30V 30A 8SO
| Part | Package / Case | Package / Case [y] | Package / Case [x] | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Mounting Type | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature [Min] | Operating Temperature [Max] | Technology | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs [Max] | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 8-SOIC | 3.9 mm | 0.154 in | 3 W 6 W | 125 nC | 4.5 V 10 V | 8-SOIC | Surface Mount | 2.5 V | 5370 pF | -55 °C | 150 °C | MOSFET (Metal Oxide) | 20 V | 30 A | 30 V | 3.3 mOhm | N-Channel |