Discrete Semiconductor Products

STU12N60M2

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MOSFET N-CH 600V 9A IPAK

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Discrete Semiconductor Products

Active

MOSFET N-CH 600V 9A IPAK

Technical Specifications

Parameters and characteristics for this part

Specification	STU12N60M2

Current - Continuous Drain (Id) @ 25°C	9 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	16 nC
Input Capacitance (Ciss) (Max) @ Vds	538 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-251-3 Short Leads, TO-251AA, IPAK
Power Dissipation (Max)	85 W
Rds On (Max) @ Id, Vgs	450 mOhm
Supplier Device Package	IPAK
Supplier Device Package	TO-251
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

Part	Technology	Mounting Type	Package / Case	Power Dissipation (Max)	Supplier Device Package	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Vgs (Max)	Drain to Source Voltage (Vdss)	Operating Temperature [Max]	Operating Temperature [Min]	Vgs(th) (Max) @ Id
STMicroelectronics STU12N60M2	MOSFET (Metal Oxide)	Through Hole	IPAK TO-251-3 Short Leads TO-251AA	85 W	IPAK	TO-251	9 A	16 nC	538 pF	450 mOhm	10 V	N-Channel	25 V	600 V	150 °C	-55 °C	4 V

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General part information

N-Channel 600 V 9A (Tc) 85W (Tc) Through Hole TO-251 (IPAK)

Technical documentation and resources