
Discrete Semiconductor Products
PBRP113ZT,215
ActiveNexperia USA Inc.
TRANSISTOR: PNP; BIPOLAR; BRT; 40V; 0.6A; 370MW; SOT23,TO236AB
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Discrete Semiconductor Products
PBRP113ZT,215
ActiveNexperia USA Inc.
TRANSISTOR: PNP; BIPOLAR; BRT; 40V; 0.6A; 370MW; SOT23,TO236AB
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | PBRP113ZT,215 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 600 mA |
| Current - Collector Cutoff (Max) [Max] | 500 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 230 hFE |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-3, TO-236-3, SC-59 |
| Power - Max [Max] | 250 mW |
| Resistor - Base (R1) | 1 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
| Supplier Device Package | TO-236AB |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 750 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 40 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
PBRP113 Series
PNP low VCEsatPerformance-Based (PB) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
Documents
Technical documentation and resources