Discrete Semiconductor Products
STF35N60DM2
ActiveSTMicroelectronics
N-CHANNEL 600 V, 0.094 OHM TYP., 28 A MDMESH DM2 POWER MOSFETS IN TO-220FP PACKAGE
Discrete Semiconductor Products
STF35N60DM2
ActiveSTMicroelectronics
N-CHANNEL 600 V, 0.094 OHM TYP., 28 A MDMESH DM2 POWER MOSFETS IN TO-220FP PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STF35N60DM2 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 28 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 54 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 2400 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 Full Pack |
| Power Dissipation (Max) | 40 W |
| Rds On (Max) @ Id, Vgs | 110 mOhm |
| Supplier Device Package | TO-220FP |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 3.60 | |
| 50 | $ 2.85 | |||
| 100 | $ 2.44 | |||
| 500 | $ 2.39 | |||
Description
General part information
STF35N65DM2 Series
This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
Documents
Technical documentation and resources