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CSD85302L

Active
Texas Instruments

20-V, N CHANNEL NEXFET™ POWER MOSFET, DUAL COMMON DRAIN LGA 1.35 MM X 1.35 MM, 24 MOHM, GATE ESD PRO

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4-Picostar
Discrete Semiconductor Products

CSD85302L

Active
Texas Instruments

20-V, N CHANNEL NEXFET™ POWER MOSFET, DUAL COMMON DRAIN LGA 1.35 MM X 1.35 MM, 24 MOHM, GATE ESD PRO

Technical Specifications

Parameters and characteristics for this part

SpecificationCSD85302L
Configuration2 N-Channel (Dual) Common Drain
Gate Charge (Qg) (Max) @ Vgs7.8 nC
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case4-XFLGA
Power - Max [Max]1.7 W
Supplier Device Package4-PICOSTAR
Supplier Device Package [x]1.31
Supplier Device Package [y]1.31
TechnologyMOSFET (Metal Oxide)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
ArrowN/A 3000$ 0.15
DigikeyCut Tape (CT) 1$ 0.59
10$ 0.50
100$ 0.35
500$ 0.27
1000$ 0.22
Digi-Reel® 1$ 0.59
10$ 0.50
100$ 0.35
500$ 0.27
1000$ 0.22
Tape & Reel (TR) 3000$ 0.20
6000$ 0.19
9000$ 0.17
30000$ 0.17
Texas InstrumentsLARGE T&R 1$ 0.34
100$ 0.23
250$ 0.18
1000$ 0.12

Description

General part information

CSD85302L Series

This 20 V, 18.7 mΩ, 1.35 mm × 1.35 mm LGA Dual NexFET power MOSFET is designed to minimize resistance in the smallest footprint. Its small footprint and common drain configuration make the device ideal for battery-powered applications in small handheld devices.

This 20 V, 18.7 mΩ, 1.35 mm × 1.35 mm LGA Dual NexFET power MOSFET is designed to minimize resistance in the smallest footprint. Its small footprint and common drain configuration make the device ideal for battery-powered applications in small handheld devices.