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TO-247-3
Discrete Semiconductor Products

STW30NM50N

Obsolete
STMicroelectronics

MOSFET N-CH 500V 27A TO247-3

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DocumentsDatasheet
TO-247-3
Discrete Semiconductor Products

STW30NM50N

Obsolete
STMicroelectronics

MOSFET N-CH 500V 27A TO247-3

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationSTW30NM50N
Current - Continuous Drain (Id) @ 25°C27 A
Drain to Source Voltage (Vdss)500 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs94 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]2740 pF
Mounting TypeThrough Hole
Operating Temperature150 °C
Package / CaseTO-247-3
Power Dissipation (Max)190 W
Rds On (Max) @ Id, Vgs115 mOhm
Supplier Device PackageTO-247-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 9.88
Tube 1$ 8.71
10$ 7.46
100$ 6.22

Description

General part information

STW30N Series

N-Channel 500 V 27A (Tc) 190W (Tc) Through Hole TO-247-3

Documents

Technical documentation and resources