Specification	NSS40600CF8T1G

Current - Collector Cutoff (Max) [Max]	10 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	220
Frequency - Transition	100 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Supplier Device Package	ChipFET™
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	220 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	40 V

NSS40600CF8 Series

Bipolar Transistor, Low VCE (sat), PNP, 6.0 A, 40 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type	Frequency - Transition	Vce Saturation (Max) @ Ib, Ic	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Supplier Device Package
ON Semiconductor NSS40600CF8T1G	-55 °C	150 °C	220	PNP	100 MHz	220 mV	Surface Mount	40 V	10 µA	ChipFET™

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.59
		10	$ 1.00
		100	$ 0.67
		500	$ 0.53
		1000	$ 0.48

Description

General part information

NSS40600CF8 Series

Low VCE(sat)Bipolar Transistors are miniature surface mount devices featuring ultra low saturation voltage VCE(sat)and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.