NSS40600CF8 Series

Bipolar Transistor, Low VCE (sat), PNP, 6.0 A, 40 V

Catalog

Bipolar Transistor, Low VCE (sat), PNP, 6.0 A, 40 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type	Frequency - Transition	Vce Saturation (Max) @ Ib, Ic	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Supplier Device Package
ON Semiconductor NSS40600CF8T1G	-55 °C	150 °C	220	PNP	100 MHz	220 mV	Surface Mount	40 V	10 µA	ChipFET™

Catalog

Bipolar Transistor, Low VCE (sat), PNP, 6.0 A, 40 V

Key Features

• High Current, Low VCEsat, ESD Robust, High Current Gain, High Cut Off Frequency, Low Profile Package, Linear Gain (Beta)

• S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable

Description

Low VCE(sat)Bipolar Transistors are miniature surface mount devices featuring ultra low saturation voltage VCE(sat)and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.