MSCSM70XM75CTYZBNMG

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700V, HPD, 3 PHASE BRIDGE + ACTUATION FULL-OPTIONS HYBRID POWER DRIVE MSIC™ MOSFET MODULE

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Discrete Semiconductor Products

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700V, HPD, 3 PHASE BRIDGE + ACTUATION FULL-OPTIONS HYBRID POWER DRIVE MSIC™ MOSFET MODULE

Technical Specifications

Parameters and characteristics for this part

Specification	MSCSM70XM75CTYZBNMG

Configuration	6 N-Channel (3-Phase Bridge)
Current - Continuous Drain (Id) @ 25°C	31 A, 52 A
Drain to Source Voltage (Vdss)	700 V
Gate Charge (Qg) (Max) @ Vgs	56 nC, 99 nC
Input Capacitance (Ciss) (Max) @ Vds	2010 pF, 1175 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	Module
Power - Max	90 W
Power - Max	141 W
Rds On (Max) @ Id, Vgs	75 mOhm, 44 mOhm
Technology	Silicon Carbide (SiC)
Vgs(th) (Max) @ Id	2.7 V, 2.4 V

700V, HPD, 3 Phase Bridge + Actuation Full-Options Hybrid Power Drive mSiC™ MOSFET Module

Part	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Vgs(th) (Max) @ Id	Configuration	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Power - Max	Technology	Rds On (Max) @ Id, Vgs	Mounting Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C
Microchip Technology MSCSM70XM75CTYZBNMG	56 nC 99 nC	Module	2.4 V 2.7 V	6 N-Channel (3-Phase Bridge)	-55 °C	175 ░C	1175 pF 2010 pF	90 W	141 W	Silicon Carbide (SiC)	44 mOhm 75 mOhm	Chassis Mount	700 V	31 A 52 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

• Configuration: 3-phase bridge + Solenoid Switch + Soft Start Switch + Regen (Brake)

• SiC Power MOSFET

- Low RDS(on)

Technical documentation and resources