STGW8M120DF3
ActiveIGBT, TRENCH GATE, 16 A, 1.85 V, 167 W, 1.2 KV, TO-247, 3 PINS
STGW8M120DF3
ActiveIGBT, TRENCH GATE, 16 A, 1.85 V, 167 W, 1.2 KV, TO-247, 3 PINS
Technical Specifications
Parameters and characteristics for this part
| Specification | STGW8M120DF3 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 16 A |
| Current - Collector Pulsed (Icm) | 32 A |
| Gate Charge | 32 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 |
| Power - Max [Max] | 167 W |
| Reverse Recovery Time (trr) | 103 ns |
| Supplier Device Package | TO-247-3 |
| Switching Energy | 370 µJ, 390 µJ |
| Td (on/off) @ 25°C [custom] | 20 ns |
| Td (on/off) @ 25°C [custom] | 126 ns |
| Test Condition | 8 A, 33 Ohm, 600 V, 15 V |
| Vce(on) (Max) @ Vge, Ic [Max] | 2.3 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 1200 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STGW8M120DF3 Series
These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat)temperature coefficient and tight parameter distribution result in safer paralleling operation.
Documents
Technical documentation and resources