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Discrete Semiconductor Products

NXH40B120MNQ0SNG

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ON Semiconductor

FULL SIC MOSFET MODULE | ELITESIC TWO CHANNEL FULL SIC BOOST, 1200 V, 40 MOHM SIC MOSFET + 1200 V, 40 A SIC DIODE

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Discrete Semiconductor Products

NXH40B120MNQ0SNG

Active
ON Semiconductor

FULL SIC MOSFET MODULE | ELITESIC TWO CHANNEL FULL SIC BOOST, 1200 V, 40 MOHM SIC MOSFET + 1200 V, 40 A SIC DIODE

Technical Specifications

Parameters and characteristics for this part

SpecificationNXH40B120MNQ0SNG
ConfigurationDual Boost Chopper
InputStandard
Input Capacitance (Cies) @ Vce3.227 nF
Mounting TypeChassis Mount
NTC ThermistorTrue
Operating Temperature [Max]175 °C
Operating Temperature [Min]-40 C
Package / CaseModule
Power - Max [Max]118 W
Supplier Device Package22-PIM/Q0BOOST
Supplier Device Package [x]55
Supplier Device Package [y]32.5

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTray 1$ 85.81
10$ 68.29
NewarkEach 1$ 88.69
5$ 79.86
10$ 71.03
ON SemiconductorN/A 1$ 62.83

Description

General part information

NXH40B120MNQ0 Series

The NXH40B120MNQ0 is a EliteSiC power integrated module (PIM) containing a dual full SiC boost stage consisting of two 40mohm/1200V SiC MOSFETs and two 40A/1200V SiC diodes. Two additional 50A/1200V bypass rectifiers used for inrush current limit are included. An on-board thermistor is included.