SQV120N10-3M8_GE3

Obsolete

MOSFET N-CH 100V 120A TO262-3

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 100V 120A TO262-3

Technical Specifications

Parameters and characteristics for this part

Specification	SQV120N10-3M8_GE3

Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	190 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	7230 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max) [Max]	250 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	3.8 mOhm
Supplier Device Package	TO-262-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Technology	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	FET Type	Current - Continuous Drain (Id) @ 25°C	Grade	Package / Case	Vgs (Max)	Qualification
Vishay General Semiconductor - Diodes Division SQV120N06-4M7L_GE3	TO-262-3	4.5 V 10 V	230 nC	250 W	2.5 V	-55 °C	175 ░C	4.7 mOhm	60 V	MOSFET (Metal Oxide)	8800 pF	Through Hole	N-Channel	120 A	Automotive	I2PAK TO-262-3 Long Leads TO-262AA	20 V	AEC-Q101
Vishay General Semiconductor - Diodes Division SQV120N10-3M8_GE3	TO-262-3	10 V	190 nC	250 W	3.5 V	-55 °C	175 ░C	3.8 mOhm	100 V	MOSFET (Metal Oxide)	7230 pF	Through Hole	N-Channel	120 A	Automotive	I2PAK TO-262-3 Long Leads TO-262AA	20 V	AEC-Q101

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 100 V 120A (Tc) 250W (Tc) Through Hole TO-262-3

Technical documentation and resources