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28-SSOP
Discrete Semiconductor Products

SQV120N06-4M7L_GE3

Obsolete
Vishay Dale

MOSFET N-CH 60V 120A TO262-3

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28-SSOP
Discrete Semiconductor Products

SQV120N06-4M7L_GE3

Obsolete
Vishay Dale

MOSFET N-CH 60V 120A TO262-3

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationSQV120N06-4M7L_GE3
Current - Continuous Drain (Id) (Tc)120 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)230 nC
GradeAutomotive
Input Capacitance (Ciss) (Max)8800 pF
Mounting TypeThrough Hole
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-262AA, I2PAK, TO-262-3 Long Leads
Package NameTO-262-3
Power Dissipation (Max)250 W
QualificationAEC-Q101
Rds On (Max)4.7 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyN/A 0$ 0.001m+

CAD

3D models and CAD resources for this part

Description

General part information

SQV120 Series

N-Channel 60 V 120A (Tc) 250W (Tc) Through Hole TO-262-3

Documents

Technical documentation and resources