
FDD86113LZ
ActiveN-CHANNEL SHIELDED GATE POWERTRENCH<SUP>®</SUP> MOSFET 100V , 5.5 A, 104 MΩ
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FDD86113LZ
ActiveN-CHANNEL SHIELDED GATE POWERTRENCH<SUP>®</SUP> MOSFET 100V , 5.5 A, 104 MΩ
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Technical Specifications
Parameters and characteristics for this part
| Specification | FDD86113LZ |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 4.2 A, 5.5 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 6 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 285 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Power Dissipation (Max) | 29 W, 3.1 W |
| Rds On (Max) @ Id, Vgs | 104 mOhm |
| Supplier Device Package | TO-252AA |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 1.78 | |
| 10 | $ 1.13 | |||
| 100 | $ 0.76 | |||
| 500 | $ 0.60 | |||
| 1000 | $ 0.55 | |||
| Digi-Reel® | 1 | $ 1.78 | ||
| 10 | $ 1.13 | |||
| 100 | $ 0.76 | |||
| 500 | $ 0.60 | |||
| 1000 | $ 0.55 | |||
| Tape & Reel (TR) | 2500 | $ 0.50 | ||
| 5000 | $ 0.46 | |||
| Newark | Each (Supplied on Full Reel) | 1 | $ 0.64 | |
| 3000 | $ 0.61 | |||
| 6000 | $ 0.56 | |||
| 12000 | $ 0.50 | |||
| 18000 | $ 0.48 | |||
| 30000 | $ 0.47 | |||
| ON Semiconductor | N/A | 1 | $ 0.43 | |
Description
General part information
FDD86113LZ Series
This N-Channel logic Level MOSFETs are produced using an advanced Power Trench®process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance. G-S zener has been added to enhance ESD voltage level.
Documents
Technical documentation and resources