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TO-252AA
Discrete Semiconductor Products

FDD86113LZ

Active
ON Semiconductor

N-CHANNEL SHIELDED GATE POWERTRENCH<SUP>®</SUP> MOSFET 100V , 5.5 A, 104 MΩ

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TO-252AA
Discrete Semiconductor Products

FDD86113LZ

Active
ON Semiconductor

N-CHANNEL SHIELDED GATE POWERTRENCH<SUP>®</SUP> MOSFET 100V , 5.5 A, 104 MΩ

Technical Specifications

Parameters and characteristics for this part

SpecificationFDD86113LZ
Current - Continuous Drain (Id) @ 25°C4.2 A, 5.5 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs6 nC
Input Capacitance (Ciss) (Max) @ Vds285 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)29 W, 3.1 W
Rds On (Max) @ Id, Vgs104 mOhm
Supplier Device PackageTO-252AA
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.78
10$ 1.13
100$ 0.76
500$ 0.60
1000$ 0.55
Digi-Reel® 1$ 1.78
10$ 1.13
100$ 0.76
500$ 0.60
1000$ 0.55
Tape & Reel (TR) 2500$ 0.50
5000$ 0.46
NewarkEach (Supplied on Full Reel) 1$ 0.64
3000$ 0.61
6000$ 0.56
12000$ 0.50
18000$ 0.48
30000$ 0.47
ON SemiconductorN/A 1$ 0.43

Description

General part information

FDD86113LZ Series

This N-Channel logic Level MOSFETs are produced using an advanced Power Trench®process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance. G-S zener has been added to enhance ESD voltage level.