FDD86113LZ Series

N-Channel Shielded Gate PowerTrench® MOSFET 100V , 5.5 A, 104 mΩ

Catalog

N-Channel Shielded Gate PowerTrench® MOSFET 100V , 5.5 A, 104 mΩ

Part	Vgs(th) (Max) @ Id	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Package / Case	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Technology	Power Dissipation (Max)
ON Semiconductor FDD86113LZ	3 V	N-Channel	4.5 V 10 V	TO-252AA	6 nC	20 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	100 V	-55 °C	150 °C	104 mOhm	4.2 A 5.5 A	285 pF	Surface Mount	MOSFET (Metal Oxide)	3.1 W 29 W

Catalog

N-Channel Shielded Gate PowerTrench® MOSFET 100V , 5.5 A, 104 mΩ

Key Features

• Shielded Gate MOSFET Technology

• Max rDS(on)= 104 mΩ at VGS= 10 V, ID= 4.2 A

• Max rDS(on)= 156 mΩ at VGS= 4.5 V, ID= 3.4 A

• HBM SD Protection Level > 6 kV typical (Note 4)

• High Performance Trench Technology for Extremely Low rDS(on)

• High Power and Current Handling Capability in a widely used surface mount package

• 100% UIL Tested

• RoHS Compliant

Description

This N-Channel logic Level MOSFETs are produced using an advanced Power Trench®process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance. G-S zener has been added to enhance ESD voltage level.