Diodes Incorporated-DMT12H065LFDF-7 MOSFETs 115V N-Channel Enhancement Mode MOSFET

Discrete Semiconductor Products

DMN3025LFDF-7

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Diodes Inc

TRANSISTOR MOSFET N-CH 30V 8.3A 6-PIN UDFN2020 T/R

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Discrete Semiconductor Products

DMN3025LFDF-7

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Diodes Inc

TRANSISTOR MOSFET N-CH 30V 8.3A 6-PIN UDFN2020 T/R

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DocumentsDatasheet Package PDF +1

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	DMN3025LFDF-7

Current - Continuous Drain (Id) @ 25°C	9.9 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	13.2 nC
Input Capacitance (Ciss) (Max) @ Vds	641 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-UDFN Exposed Pad
Power Dissipation (Max)	2.1 W
Rds On (Max) @ Id, Vgs	20.5 mOhm
Supplier Device Package	U-DFN2020-6 (Type F)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

DMN3025LFDF Series

30V N-Channel Enhancement Mode MOSFET

Part	Mounting Type	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Technology	Supplier Device Package	Package / Case	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case [y]	Package / Case [x]
Diodes Inc DMN3025LFV-7	Surface Mount	20 V	9.8 nC	25 A	N-Channel	-55 °C	150 °C	4.5 V 10 V	900 mW	MOSFET (Metal Oxide)	PowerDI3333-8 (Type UX)	8-PowerVDFN	2 V	18 mOhm	500 pF	30 V
Diodes Inc DMN3025LFG-7	Surface Mount	20 V	11.6 nC	7.5 A	N-Channel	-55 °C	150 °C	4.5 V 10 V	2 W	MOSFET (Metal Oxide)	POWERDI3333-8	8-PowerVDFN	2 V	18 mOhm		30 V
Diodes Inc DMN3025LFDF-7	Surface Mount	20 V		9.9 A	N-Channel	-55 °C	150 °C	4.5 V 10 V		MOSFET (Metal Oxide)	U-DFN2020-6 (Type F)	6-UDFN Exposed Pad	2 V	20.5 mOhm		30 V	641 pF	2.1 W	13.2 nC
Diodes Inc DMN3025LSS-13	Surface Mount	20 V		7.2 A	N-Channel	-55 °C	150 °C	4.5 V 10 V		MOSFET (Metal Oxide)	8-SO	8-SOIC	2 V	20 mOhm		30 V	641 pF	1.4 W	13.2 nC	3.9 mm	0.154 in

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.49
		10	$ 0.38
		100	$ 0.23
		500	$ 0.21
		1000	$ 0.14
	Digi-Reel®	1	$ 0.49
		10	$ 0.38
		100	$ 0.23
		500	$ 0.21
		1000	$ 0.14
	Tape & Reel (TR)	3000	$ 0.11

Description

General part information

DMN3025LFDF Series

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

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Technical documentation and resources

Datasheet

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Recommended Soldering Techniques

Technical Document