Discrete Semiconductor Products

DMN3025LFG-7

Active

Diodes Inc

MOSFET, N-CH, 30V, 7.5A, POWERDI 3333 ROHS COMPLIANT: YES

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Search across all available documentation for this part.

DocumentsDatasheet Product Change Notice EN +1

Discrete Semiconductor Products

DMN3025LFG-7

Active

Diodes Inc

MOSFET, N-CH, 30V, 7.5A, POWERDI 3333 ROHS COMPLIANT: YES

Deep-Dive with AI

DocumentsDatasheet Product Change Notice EN +1

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	DMN3025LFG-7

Current - Continuous Drain (Id) @ 25°C	7.5 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	11.6 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max) [Max]	2 W
Rds On (Max) @ Id, Vgs	18 mOhm
Supplier Device Package	POWERDI3333-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

DMN3025LFDF Series

30V N-Channel Enhancement Mode MOSFET

Part	Mounting Type	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Technology	Supplier Device Package	Package / Case	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case [y]	Package / Case [x]
Diodes Inc DMN3025LFV-7	Surface Mount	20 V	9.8 nC	25 A	N-Channel	-55 °C	150 °C	4.5 V 10 V	900 mW	MOSFET (Metal Oxide)	PowerDI3333-8 (Type UX)	8-PowerVDFN	2 V	18 mOhm	500 pF	30 V
Diodes Inc DMN3025LFG-7	Surface Mount	20 V	11.6 nC	7.5 A	N-Channel	-55 °C	150 °C	4.5 V 10 V	2 W	MOSFET (Metal Oxide)	POWERDI3333-8	8-PowerVDFN	2 V	18 mOhm		30 V
Diodes Inc DMN3025LFDF-7	Surface Mount	20 V		9.9 A	N-Channel	-55 °C	150 °C	4.5 V 10 V		MOSFET (Metal Oxide)	U-DFN2020-6 (Type F)	6-UDFN Exposed Pad	2 V	20.5 mOhm		30 V	641 pF	2.1 W	13.2 nC
Diodes Inc DMN3025LSS-13	Surface Mount	20 V		7.2 A	N-Channel	-55 °C	150 °C	4.5 V 10 V		MOSFET (Metal Oxide)	8-SO	8-SOIC	2 V	20 mOhm		30 V	641 pF	1.4 W	13.2 nC	3.9 mm	0.154 in

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.45
		10	$ 0.39
		100	$ 0.27
		500	$ 0.21
		1000	$ 0.17
	Digi-Reel®	1	$ 0.45
		10	$ 0.39
		100	$ 0.27
		500	$ 0.21
		1000	$ 0.17
	Tape & Reel (TR)	2000	$ 0.13
Newark	Each (Supplied on Cut Tape)	1	$ 0.71
		10	$ 0.45
		25	$ 0.40
		50	$ 0.34
		100	$ 0.29
		250	$ 0.26
		500	$ 0.22
		1000	$ 0.20

Description

General part information

DMN3025LFDF Series

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Documents

Technical documentation and resources

Datasheet

Product Change Notice EN

Datasheet

Recommended Soldering Techniques

Technical Document