Discrete Semiconductor Products

STU5N95K3

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STMicroelectronics

MOSFET TRANSISTOR, N CHANNEL, 4 A, 950 V, 3 OHM, 10 V, 4 V ROHS COMPLIANT: YES

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DocumentsDatasheet TN1156 +16

Discrete Semiconductor Products

STU5N95K3

Active

STMicroelectronics

MOSFET TRANSISTOR, N CHANNEL, 4 A, 950 V, 3 OHM, 10 V, 4 V ROHS COMPLIANT: YES

Deep-Dive with AI

DocumentsDatasheet TN1156 +16

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STU5N95K3

Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	950 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	19 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	460 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-251-3 Short Leads, TO-251AA, IPAK
Power Dissipation (Max)	90 W
Rds On (Max) @ Id, Vgs	3.5 Ohm
Supplier Device Package	IPAK
Supplier Device Package	TO-251
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

STU5N95K3 Series

Part	Power Dissipation (Max)	Technology	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Package / Case	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Supplier Device Package	Supplier Device Package	Rds On (Max) @ Id, Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs
STMicroelectronics STU5N95K3	90 W	MOSFET (Metal Oxide)	10 V	4 A	Through Hole	IPAK TO-251-3 Short Leads TO-251AA	N-Channel	460 pF	950 V	5 V	IPAK	TO-251	3.5 Ohm	150 °C	-55 °C	30 V	19 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 3.85
	Tube	75	$ 2.18
		150	$ 1.87
		375	$ 1.77
		525	$ 1.66
		1875	$ 1.42
		3750	$ 1.34
		7500	$ 1.29
Mouser	N/A	3000	$ 1.28
Newark	Each	1	$ 1.59

Description

General part information

STU5N95K3 Series

These SuperMESH3 Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications.100% avalanche testedExtremely large avalanche performanceGate charge minimizedVery low intrinsic capacitancesZener-protected