Discrete Semiconductor Products

SIZF914DT-T1-GE3

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MOSFET 2N-CH 25V 23.5A 8PWRPAIR

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Discrete Semiconductor Products

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MOSFET 2N-CH 25V 23.5A 8PWRPAIR

Technical Specifications

Parameters and characteristics for this part

Specification	SIZF914DT-T1-GE3

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	40 A, 52 A, 23.5 A, 60 A
Drain to Source Voltage (Vdss)	25 V
Gate Charge (Qg) (Max) @ Vgs	21 nC
Gate Charge (Qg) (Max) @ Vgs	98 nC
Input Capacitance (Ciss) (Max) @ Vds	4670 pF, 1050 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerWDFN
Power - Max	60 W, 4 W, 3.4 W, 26.6 W
Rds On (Max) @ Id, Vgs	3.8 mOhm, 0.9 mOhm
Supplier Device Package	8-PowerPair® (6x5)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.2 V, 2.4 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Supplier Device Package	Technology	Rds On (Max) @ Id, Vgs	Power - Max	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Mounting Type	Configuration	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]
Vishay General Semiconductor - Diodes Division SIZF914DT-T1-GE3	1050 pF 4670 pF	8-PowerWDFN	8-PowerPair® (6x5)	MOSFET (Metal Oxide)	0.9 mOhm 3.8 mOhm	3.4 W 4 W 26.6 W 60 W	2.2 V 2.4 V	21 nC	98 nC	25 V	Surface Mount	2 N-Channel (Dual)	23.5 A 40 A 52 A 60 A	-55 °C	150 °C

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General part information

Mosfet Array 25V 23.5A (Ta), 40A (Tc), 52A (Ta), 60A (Tc) 3.4W (Ta), 26.6W (Tc), 4W (Ta), 60W (Tc) Surface Mount 8-PowerPair® (6x5)

Technical documentation and resources