Discrete Semiconductor Products

BUK969R3-100E,118

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Freescale Semiconductor - NXP

TRANS MOSFET N-CH 100V 100A AUTOMOTIVE AEC-Q101 3-PIN(2+TAB) D2PAK T/R

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DocumentsDatasheet Using Power MOSFET Zth Curves +16

Discrete Semiconductor Products

BUK969R3-100E,118

Active

Freescale Semiconductor - NXP

TRANS MOSFET N-CH 100V 100A AUTOMOTIVE AEC-Q101 3-PIN(2+TAB) D2PAK T/R

Deep-Dive with AI

DocumentsDatasheet Using Power MOSFET Zth Curves +16

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	BUK969R3-100E,118

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	10 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	94.3 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	11650 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	263 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	8.9 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	2.1 V

BUK969R3-100E Series

N-channel TrenchMOS logic level FET

Part	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Input Capacitance (Ciss) (Max) @ Vds	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Drain to Source Voltage (Vdss)	Qualification	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Vgs(th) (Max) @ Id	Vgs (Max)	Grade	Supplier Device Package	FET Type	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)
Freescale Semiconductor - NXP BUK969R3-100E,118	10 V	5 V	11650 pF	MOSFET (Metal Oxide)	-55 °C	175 ░C	94.3 nC	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	100 V	AEC-Q101	8.9 mOhm	100 A	Surface Mount	2.1 V	10 V	Automotive	D2PAK	N-Channel	263 W
Freescale Semiconductor - NXP BUK969R0-60E,118			4350 pF	MOSFET (Metal Oxide)	-55 °C	175 ░C	29.8 nC	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	60 V	AEC-Q101	8 mOhm	75 A	Surface Mount	2.1 V	10 V	Automotive	D2PAK	N-Channel		5 V	137 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 2.86
	Digi-Reel®	1	$ 2.86
	Tape & Reel (TR)	4800	$ 1.20

Description

General part information

BUK969R3-100E Series

Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications.