BUK969R3-100E Series

N-channel TrenchMOS logic level FET

Manufacturer: Freescale Semiconductor - NXP

Catalog

N-channel TrenchMOS logic level FET

Part	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Input Capacitance (Ciss) (Max) @ Vds	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Drain to Source Voltage (Vdss)	Qualification	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Vgs(th) (Max) @ Id	Vgs (Max)	Grade	Supplier Device Package	FET Type	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)
Freescale Semiconductor - NXP BUK969R3-100E,118	10 V	5 V	11650 pF	MOSFET (Metal Oxide)	-55 °C	175 ░C	94.3 nC	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	100 V	AEC-Q101	8.9 mOhm	100 A	Surface Mount	2.1 V	10 V	Automotive	D2PAK	N-Channel	263 W
Freescale Semiconductor - NXP BUK969R0-60E,118			4350 pF	MOSFET (Metal Oxide)	-55 °C	175 ░C	29.8 nC	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	60 V	AEC-Q101	8 mOhm	75 A	Surface Mount	2.1 V	10 V	Automotive	D2PAK	N-Channel		5 V	137 W

Catalog

N-channel TrenchMOS logic level FET

Description

Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications.