NXH020P120MNF1PG

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SIC MODULE, 2-PACK HALF BRIDGE TOPOLOGY, 1200 V, 20 MOHM SIC M1 MOSFET

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Discrete Semiconductor Products

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SIC MODULE, 2-PACK HALF BRIDGE TOPOLOGY, 1200 V, 20 MOHM SIC M1 MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	NXH020P120MNF1PG

Configuration	2 N-Channel (Dual) Common Source
Current - Continuous Drain (Id) @ 25°C	51 A
Drain to Source Voltage (Vdss)	1200 V
Drain to Source Voltage (Vdss)	1.2 kV
Gate Charge (Qg) (Max) @ Vgs	213.5 nC
Input Capacitance (Ciss) (Max) @ Vds	2420 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	Module
Power - Max [Max]	119 W
Rds On (Max) @ Id, Vgs	30 mOhm
Technology	Silicon Carbide (SiC)
Vgs(th) (Max) @ Id	4.3 V

SiC Module, 4-PACK Full Bridge Topology, 1200 V, 20 mohm M1 SiC MOSFET

Part	Rds On (Max) @ Id, Vgs	Technology	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Power - Max [Max]	Configuration	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Supplier Device Package [x]	Supplier Device Package [y]	Drain to Source Voltage (Vdss)	Drain to Source Voltage (Vdss)	Configuration
ON Semiconductor NXH020F120MNF1PTG	30 mOhm	Silicon Carbide (SiC)	4.3 V	2420 pF	51 A	-40 C	175 °C	Chassis Mount	119 W	4 N-Channel	Module	213.5 nC	22-PIM	33.8	42.5	1200 V	1.2 kV
ON Semiconductor NXH020F120MNF1PG	30 mOhm	Silicon Carbide (SiC)	4.3 V	2420 pF	51 A	-40 C	175 °C	Chassis Mount	119 W	4 N-Channel	Module	213.5 nC	22-PIM	33.8	42.5	1200 V	1.2 kV
ON Semiconductor NXH020P120MNF1PG	30 mOhm	Silicon Carbide (SiC)	4.3 V	2420 pF	51 A	-40 °C	150 °C	Chassis Mount	119 W		Module	213.5 nC				1200 V	1.2 kV	2 N-Channel (Dual) Common Source

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

The NXH020P120MNF1 is a SiC MOSFET module containing a 20 mohm 1200V SiC MOSFET half bridge and an NTC thermistor in an F1 module.