
Discrete Semiconductor Products
NXH020F120MNF1PG
ActiveON Semiconductor
SILICON CARBIDE MOSFET, FULL BRIDGE, DUAL N CHANNEL, 51 A, 1.2 KV, 0.02 OHM, MODULE
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Discrete Semiconductor Products
NXH020F120MNF1PG
ActiveON Semiconductor
SILICON CARBIDE MOSFET, FULL BRIDGE, DUAL N CHANNEL, 51 A, 1.2 KV, 0.02 OHM, MODULE
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Technical Specifications
Parameters and characteristics for this part
| Specification | NXH020F120MNF1PG |
|---|---|
| Configuration | 4 N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 51 A |
| Drain to Source Voltage (Vdss) | 1200 V |
| Drain to Source Voltage (Vdss) | 1.2 kV |
| Gate Charge (Qg) (Max) @ Vgs | 213.5 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 2420 pF |
| Mounting Type | Chassis Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -40 C |
| Package / Case | Module |
| Power - Max [Max] | 119 W |
| Rds On (Max) @ Id, Vgs | 30 mOhm |
| Supplier Device Package | 22-PIM |
| Supplier Device Package [x] | 33.8 |
| Supplier Device Package [y] | 42.5 |
| Technology | Silicon Carbide (SiC) |
| Vgs(th) (Max) @ Id | 4.3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tray | 1 | $ 161.17 | |
| 10 | $ 150.95 | |||
| 28 | $ 145.28 | |||
| Newark | Each | 1 | $ 147.77 | |
| ON Semiconductor | N/A | 1 | $ 103.81 | |
Description
General part information
NXH020F120MNF1 Series
The NXH020P120MNF1 is a SiC MOSFET module containing a 20 mohm 1200V SiC MOSFET half bridge and an NTC thermistor in an F1 module.
Documents
Technical documentation and resources