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NXH020F120MNF1PG
Discrete Semiconductor Products

NXH020F120MNF1PG

Active
ON Semiconductor

SILICON CARBIDE MOSFET, FULL BRIDGE, DUAL N CHANNEL, 51 A, 1.2 KV, 0.02 OHM, MODULE

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NXH020F120MNF1PG
Discrete Semiconductor Products

NXH020F120MNF1PG

Active
ON Semiconductor

SILICON CARBIDE MOSFET, FULL BRIDGE, DUAL N CHANNEL, 51 A, 1.2 KV, 0.02 OHM, MODULE

Technical Specifications

Parameters and characteristics for this part

SpecificationNXH020F120MNF1PG
Configuration4 N-Channel
Current - Continuous Drain (Id) @ 25°C51 A
Drain to Source Voltage (Vdss)1200 V
Drain to Source Voltage (Vdss)1.2 kV
Gate Charge (Qg) (Max) @ Vgs213.5 nC
Input Capacitance (Ciss) (Max) @ Vds2420 pF
Mounting TypeChassis Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-40 C
Package / CaseModule
Power - Max [Max]119 W
Rds On (Max) @ Id, Vgs30 mOhm
Supplier Device Package22-PIM
Supplier Device Package [x]33.8
Supplier Device Package [y]42.5
TechnologySilicon Carbide (SiC)
Vgs(th) (Max) @ Id4.3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTray 1$ 161.17
10$ 150.95
28$ 145.28
NewarkEach 1$ 147.77
ON SemiconductorN/A 1$ 103.81

Description

General part information

NXH020F120MNF1 Series

The NXH020P120MNF1 is a SiC MOSFET module containing a 20 mohm 1200V SiC MOSFET half bridge and an NTC thermistor in an F1 module.