Specification	VN2410L-G-P014

Current - Continuous Drain (Id) @ 25°C	190 mA
Drain to Source Voltage (Vdss)	240 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	125 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-226-3, TO-92-3
Power Dissipation (Max)	1 W
Rds On (Max) @ Id, Vgs [Max]	10 Ohm
Supplier Device Package	TO-92-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

VN2410 Series

MOSFET, N-Channel Enhancement-Mode, 240V, 10 Ohm

Part	Mounting Type	Technology	Vgs(th) (Max) @ Id	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs [Max]	Package / Case	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	FET Type
Microchip Technology VN2410L-G-P013	Through Hole	MOSFET (Metal Oxide)	2 V	20 V	125 pF	1 W	190 mA	TO-92-3	240 V	10 Ohm	TO-226-3 TO-92-3	10 V	2.5 V	-55 °C	150 °C	N-Channel
Microchip Technology VN2410L-G-P014	Through Hole	MOSFET (Metal Oxide)	2 V	20 V	125 pF	1 W	190 mA	TO-92-3	240 V	10 Ohm	TO-226-3 TO-92-3	10 V	2.5 V	-55 °C	150 °C	N-Channel

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tape & Box (TB)	2000	$ 0.98
Microchip Direct	AMMO	1	$ 1.28
		25	$ 1.06
		100	$ 0.98
		1000	$ 0.80
		5000	$ 0.75
		10000	$ 0.69

Description

General part information

VN2410 Series

This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.

Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Documents

Technical documentation and resources

Datasheet

DMOS Devices for Telecommunications

Application Notes

Understanding MOSFET Data

Application Notes