Discrete Semiconductor Products

STS10DN3LH5

NRND

STMicroelectronics

DUAL N-CHANNEL 30 V, 0.019 OHM;, 10 A, SO-8 STRIPFET (TM); V POWER MOSFET

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DocumentsDatasheet AN3267 +9

Discrete Semiconductor Products

STS10DN3LH5

NRND

STMicroelectronics

DUAL N-CHANNEL 30 V, 0.019 OHM;, 10 A, SO-8 STRIPFET (TM); V POWER MOSFET

Deep-Dive with AI

DocumentsDatasheet AN3267 +9

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STS10DN3LH5

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	10 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	4.6 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	475 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	0.154 in
Package / Case	8-SOIC
Package / Case	3.9 mm
Power - Max [Max]	2.5 W
Rds On (Max) @ Id, Vgs	21 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

STS10DN3LH5 Series

Part	Technology	Vgs(th) (Max) @ Id	Power - Max [Max]	Supplier Device Package	Mounting Type	FET Feature	Configuration	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Package / Case	Package / Case	Package / Case	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Max]	Operating Temperature [Min]
STMicroelectronics STS10DN3LH5	MOSFET (Metal Oxide)	1 V	2.5 W	8-SOIC	Surface Mount	Logic Level Gate	2 N-Channel (Dual)	21 mOhm	475 pF	4.6 nC	30 V	0.154 in	8-SOIC	3.9 mm	10 A	150 °C	-55 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.32
		10	$ 1.08
		100	$ 0.84
		500	$ 0.71
		1000	$ 0.58
	Digi-Reel®	1	$ 1.32
		10	$ 1.08
		100	$ 0.84
		500	$ 0.71
		1000	$ 0.58
	N/A	10084	$ 1.85
	Tape & Reel (TR)	2500	$ 0.54
		5000	$ 0.50
		7500	$ 0.50
Newark	Each	1	$ 0.59
		10	$ 0.59
		100	$ 0.59
		500	$ 0.59
		1000	$ 0.59
		2500	$ 0.52
		10000	$ 0.50

Description

General part information

STS10DN3LH5 Series

This STripFETV Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class FOM.RDS(on)* Qgindustry benchmarkExtremely low on-resistance RDS(on)Very low switching gate chargeHigh avalanche ruggednessLow gate drive power losses