Discrete Semiconductor Products

SI7942DP-T1-GE3

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MOSFET 2N-CH 100V 3.8A PPAK SO8

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Discrete Semiconductor Products

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MOSFET 2N-CH 100V 3.8A PPAK SO8

Technical Specifications

Parameters and characteristics for this part

Specification	SI7942DP-T1-GE3

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	3.8 A
Drain to Source Voltage (Vdss)	100 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	24 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8 Dual
Power - Max [Max]	1.4 W
Rds On (Max) @ Id, Vgs	49 mOhm
Supplier Device Package	PowerPAK® SO-8 Dual
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	4 V

Part	Technology	FET Feature	Power - Max [Max]	Supplier Device Package	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Mounting Type	Configuration	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id
Vishay General Semiconductor - Diodes Division SI7942DP-T1-GE3	MOSFET (Metal Oxide)	Logic Level Gate	1.4 W	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual	-55 °C	150 °C	3.8 A	100 V	Surface Mount	2 N-Channel (Dual)	49 mOhm	24 nC	4 V
Vishay General Semiconductor - Diodes Division SI7942DP-T1-E3	MOSFET (Metal Oxide)	Logic Level Gate	1.4 W	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual	-55 °C	150 °C	3.8 A	100 V	Surface Mount	2 N-Channel (Dual)	49 mOhm	24 nC	4 V

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General part information

Mosfet Array 100V 3.8A 1.4W Surface Mount PowerPAK® SO-8 Dual

Technical documentation and resources

No documents available