SI7942 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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MOSFET 2N-CH 100V 3.8A PPAK SO8
| Part | Technology | FET Feature | Power - Max [Max] | Supplier Device Package | Package / Case | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Mounting Type | Configuration | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | MOSFET (Metal Oxide) | Logic Level Gate | 1.4 W | PowerPAK® SO-8 Dual | PowerPAK® SO-8 Dual | -55 °C | 150 °C | 3.8 A | 100 V | Surface Mount | 2 N-Channel (Dual) | 49 mOhm | 24 nC | 4 V |
Vishay General Semiconductor - Diodes Division | MOSFET (Metal Oxide) | Logic Level Gate | 1.4 W | PowerPAK® SO-8 Dual | PowerPAK® SO-8 Dual | -55 °C | 150 °C | 3.8 A | 100 V | Surface Mount | 2 N-Channel (Dual) | 49 mOhm | 24 nC | 4 V |