Specification	RJS6004WDPK-00#T0

Current - Average Rectified (Io) (per Diode)	10 A
Current - Reverse Leakage @ Vr	10 µA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Reverse Recovery Time (trr)	15 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-3P
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.8 V

RJS6004WDPK Series

SiC Schottky Barrier Diode

Part	Diode Configuration	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Reverse Recovery Time (trr)	Technology	Package / Case	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io) (per Diode)	Mounting Type
Renesas Electronics Corporation RJS6004WDPK-00#T0	1 Pair Common Cathode	200 mA 500 ns	600 V	15 ns	SiC (Silicon Carbide) Schottky	TO-220-3 Full Pack	1.8 V	150 °C	-55 °C	TO-3P	10 µA	10 A	Through Hole

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	8	$ 38.46
LCSC	N/A	1	$ 0.00

Description

General part information

RJS6004WDPK Series

We offer high-performance products with low forward voltage (VF) and high-speed reverse recovery time (trr) for increasing device efficiency. We are also employing a new material (silicon carbide: SiC) for products with even higher efficiency.

Documents

Technical documentation and resources

RJS6004WDPK Data Sheet (600V - 20A - Diode / SiC Schottky Barrier Diode)

Datasheet