Discrete Semiconductor Products
RJS6004WDPK-00#T0
ActiveRenesas Electronics Corporation
DIODE ARR SIC SCHOTT 600V TO3P
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DocumentsRJS6004WDPK-00#T0 | Datasheet
Discrete Semiconductor Products
RJS6004WDPK-00#T0
ActiveRenesas Electronics Corporation
DIODE ARR SIC SCHOTT 600V TO3P
Deep-Dive with AI
DocumentsRJS6004WDPK-00#T0 | Datasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | RJS6004WDPK-00#T0 |
|---|---|
| Current - Average Rectified (Io) (per Diode) | 10 A |
| Current - Reverse Leakage @ Vr | 10 µA |
| Diode Configuration | 1 Pair Common Cathode |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 150 °C |
| Operating Temperature - Junction [Min] | -55 °C |
| Package / Case | TO-220-3 Full Pack, SC-65-3, TO-3P-3 |
| Reverse Recovery Time (trr) | 15 ns |
| Speed | 500 ns, 200 mA |
| Supplier Device Package | TO-3P |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 8 | $ 38.46 | |
| N/A | 0 | $ 0.00 | ||
| 750 | $ 43.69 | |||
Description
General part information
RJS6004WDPK Series
We offer high-performance products with low forward voltage (VF) and high-speed reverse recovery time (trr) for increasing device efficiency. We are also employing a new material (silicon carbide: SiC) for products with even higher efficiency.
Documents
Technical documentation and resources