RJS6004WDPK Series

SiC Schottky Barrier Diode

Manufacturer: Renesas Electronics Corporation

Catalog

SiC Schottky Barrier Diode

Part	Diode Configuration	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Reverse Recovery Time (trr)	Technology	Package / Case	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io) (per Diode)	Mounting Type
Renesas Electronics Corporation RJS6004WDPK-00#T0	1 Pair Common Cathode	200 mA 500 ns	600 V	15 ns	SiC (Silicon Carbide) Schottky	TO-220-3 Full Pack	1.8 V	150 °C	-55 °C	TO-3P	10 µA	10 A	Through Hole

Catalog

SiC Schottky Barrier Diode

Description

We offer high-performance products with low forward voltage (VF) and high-speed reverse recovery time (trr) for increasing device efficiency. We are also employing a new material (silicon carbide: SiC) for products with even higher efficiency.