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5-DFN, 8-SO Flat Lead
Discrete Semiconductor Products

NTMFS3D2N10MDT1G

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ON Semiconductor

N-CHANNEL SHIELDED GATE POWERTRENCH® MOSFET 100V, 142A, 3.2MΩ

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5-DFN, 8-SO Flat Lead
Discrete Semiconductor Products

NTMFS3D2N10MDT1G

Active
ON Semiconductor

N-CHANNEL SHIELDED GATE POWERTRENCH® MOSFET 100V, 142A, 3.2MΩ

Technical Specifications

Parameters and characteristics for this part

SpecificationNTMFS3D2N10MDT1G
Current - Continuous Drain (Id) @ 25°C19 A, 142 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)6 V, 10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]71.3 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]3900 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN, 5 Leads
Power Dissipation (Max)2.8 W, 155 W
Rds On (Max) @ Id, Vgs3.5 mOhm
Supplier Device Package5-DFN (5x6)
Supplier Device Package8-SOFL
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 4.11
10$ 2.71
100$ 1.91
500$ 1.57
Tape & Reel (TR) 1500$ 1.45
NewarkEach (Supplied on Full Reel) 1$ 1.83
3000$ 1.75
6000$ 1.63
12000$ 1.51
18000$ 1.46
30000$ 1.43
ON SemiconductorN/A 1$ 1.33

Description

General part information

NTMFS3D2N10MD Series

This N-Channel MV MOSFET is produced using an advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with very low Qg and Qoss.