
Discrete Semiconductor Products
NTMFS3D2N10MDT1G
ActiveON Semiconductor
N-CHANNEL SHIELDED GATE POWERTRENCH® MOSFET 100V, 142A, 3.2MΩ
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Discrete Semiconductor Products
NTMFS3D2N10MDT1G
ActiveON Semiconductor
N-CHANNEL SHIELDED GATE POWERTRENCH® MOSFET 100V, 142A, 3.2MΩ
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | NTMFS3D2N10MDT1G |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 19 A, 142 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6 V, 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 71.3 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 3900 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Power Dissipation (Max) | 2.8 W, 155 W |
| Rds On (Max) @ Id, Vgs | 3.5 mOhm |
| Supplier Device Package | 5-DFN (5x6) |
| Supplier Device Package | 8-SOFL |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 4.11 | |
| 10 | $ 2.71 | |||
| 100 | $ 1.91 | |||
| 500 | $ 1.57 | |||
| Tape & Reel (TR) | 1500 | $ 1.45 | ||
| Newark | Each (Supplied on Full Reel) | 1 | $ 1.83 | |
| 3000 | $ 1.75 | |||
| 6000 | $ 1.63 | |||
| 12000 | $ 1.51 | |||
| 18000 | $ 1.46 | |||
| 30000 | $ 1.43 | |||
| ON Semiconductor | N/A | 1 | $ 1.33 | |
Description
General part information
NTMFS3D2N10MD Series
This N-Channel MV MOSFET is produced using an advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with very low Qg and Qoss.
Documents
Technical documentation and resources