Discrete Semiconductor Products

GP3D050A120B

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DIODE SIL CARB 1.2KV 50A TO247-2

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Discrete Semiconductor Products

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DIODE SIL CARB 1.2KV 50A TO247-2

Technical Specifications

Parameters and characteristics for this part

Specification	GP3D050A120B

Capacitance @ Vr, F	3040 pF
Current - Average Rectified (Io)	50 A
Current - Reverse Leakage @ Vr	100 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-247-2
Reverse Recovery Time (trr)	0 ns
Speed	500 mA
Supplier Device Package	TO-247-2
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Reverse Recovery Time (trr)	Speed	Technology	Capacitance @ Vr, F	Supplier Device Package	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - Forward (Vf) (Max) @ If	Package / Case	Mounting Type
SemiQ GP3D050A120B	1.2 kV	0 ns	500 mA	SiC (Silicon Carbide) Schottky	3040 pF	TO-247-2	100 µA	50 A	175 ░C	-55 °C	1.7 V	TO-247-2	Through Hole

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General part information

Diode 1200 V 50A Through Hole TO-247-2

Technical documentation and resources